RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Crucial Technology CT8G4DFRA266.C8FN 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Crucial Technology CT8G4DFRA266.C8FN 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
29
Around 14% lower latency
Faster reading speed, GB/s
16.1
15.5
Average value in the tests
Reasons to consider
Crucial Technology CT8G4DFRA266.C8FN 8GB
Report a bug
Faster write speed, GB/s
12.4
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
29
Read speed, GB/s
16.1
15.5
Write speed, GB/s
10.1
12.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
3091
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325U6CFR8C-PB 2GB
Avant Technology W641GU48J7240ND 8GB
Kingston ACR16D3LS1KNG/8G 8GB
G Skill Intl F4-3200C16-16GTZ 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK8GX4M2A2400C16 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C14-8GTRSB 8GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMW32GX4M4A2666C16 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-2400C17-16GIS 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F5-5600J4040C16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CM4X4GF2400C16S2 4GB
Report a bug
×
Bug description
Source link