RAM comparison Samsung 1600 CL10 Series 8GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Samsung 1600 CL10 Series 8GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Overall score

Samsung 1600 CL10 Series 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung 1600 CL10 Series 8GB

Below the latency in the PassMark tests, ns

25 45

Around 44% lower latency
Faster reading speed, GB/s

16.1 11.7

Average value in the tests
Faster write speed, GB/s

10.1 8.4

Average value in the tests
Higher memory bandwidth, mbps

12800 1900

Around 6.74% higher bandwidth

Reasons to consider
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Complete list of technical specifications

Samsung 1600 CL10 Series 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Main characteristics

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

9-9-9-24 / 1600 MHz no data
Ranking PassMark (The more the better)

2764 2387

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns