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Samsung 1600 CL10 Series 8GB
Tanbassh 8G 2666MHZ 8GB

Samsung 1600 CL10 Series 8GB vs Tanbassh 8G 2666MHZ 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 50
    Around 50% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 10.2
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 7.5
    Average value in the tests
Tanbassh 8G 2666MHZ 8GB Reasons to consider
Tanbassh 8G 2666MHZ 8GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Tanbassh 8G 2666MHZ 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 50
  • Read speed, GB/s
    16.1 left arrow 10.2
  • Write speed, GB/s
    10.1 left arrow 7.5
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2064

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Tanbassh 8G 2666MHZ 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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