RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
10.5
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
59
Around -69% lower latency
Faster write speed, GB/s
8.1
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
35
Read speed, GB/s
4,833.8
10.5
Write speed, GB/s
2,123.3
8.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
731
1998
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
Samsung M471B1G73EB0-YK0 8GB
Samsung M378A1K43CB2-CRC 8GB
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
Kingston KF3200C16D4/8GX 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology M471A1K43BB1-CRC 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-4000C15-8GTRS 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5643-001.A00G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.C1GMM.AUW0C 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMD16GX4M4C3200C15 4GB
Kingston ACR16D3LS1KNG/8G 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMK16GX4M2D2400C14 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Jinyu CL16-16-16 D4-2400 8GB
Report a bug
×
Bug description
Source link