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Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 4ATF51264HZ-2G6E1 4GB

Samsung M3 78T2863QZS-CF7 1GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB

Overall score
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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Differences Specifications Comments

Differences

Samsung M3 78T2863QZS-CF7 1GB Reasons to consider
Samsung M3 78T2863QZS-CF7 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 14.2
    Average value in the tests
Micron Technology 4ATF51264HZ-2G6E1 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    38 left arrow 69
    Around -82% lower latency
  • Faster write speed, GB/s
    10.3 left arrow 1,857.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    69 left arrow 38
  • Read speed, GB/s
    4,217.2 left arrow 14.2
  • Write speed, GB/s
    1,857.7 left arrow 10.3
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    668 left arrow 2148

Samsung M3 78T2863QZS-CF7 1GB RAM comparisons

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Micron Technology 4ATF51264HZ-2G6E1 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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