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Samsung M3 78T3354BZ0-CCC 256MB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Below the latency in the PassMark tests, ns
46
71
Around 35% lower latency
Faster reading speed, GB/s
2
15.6
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster write speed, GB/s
6.4
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
21300
3200
Around 6.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
71
Read speed, GB/s
2,909.8
15.6
Write speed, GB/s
1,519.2
6.4
Memory bandwidth, mbps
3200
21300
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
3-3-3-12 / 400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
241
1650
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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