RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Chun Well Technology Holding Limited D4U1636181DC 16GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Chun Well Technology Holding Limited D4U1636181DC 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
17.3
Average value in the tests
Faster write speed, GB/s
2,168.2
12.2
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited D4U1636181DC 16GB
Report a bug
Below the latency in the PassMark tests, ns
36
60
Around -67% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
36
Read speed, GB/s
4,595.2
17.3
Write speed, GB/s
2,168.2
12.2
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
941
3169
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Chun Well Technology Holding Limited D4U1636181DC 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMU64GX4M4C3000C15 16GB
Samsung M471B5273CH0-CH9 4GB
Neo Forza GKE160SO204808-3200 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Transcend Information TS2GSH64V6B 16GB
Kingston KF560C40-16 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KHYXPX-MID 8GB
Kingston ACR256X64D3S1333C9 2GB
Jinyu CL16-16-16 D4-2400 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston HX426C16FB2/8-SP 8GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Corsair CMX8GX3M2A1600C11 4GB
Corsair CM4X4GF2133C15S2 4GB
Samsung M393B5270CH0-CH9 4GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
V-GEN D4S8GL30A8TS5 8GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung M378A1G44BB0-CWE 8GB
Report a bug
×
Bug description
Source link