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Samsung M3 78T5663RZ3-CE6 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
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Faster reading speed, GB/s
4
19.4
Average value in the tests
Faster write speed, GB/s
2,168.2
16.3
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
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Below the latency in the PassMark tests, ns
32
60
Around -88% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
32
Read speed, GB/s
4,595.2
19.4
Write speed, GB/s
2,168.2
16.3
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
941
3726
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
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Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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