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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB

Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3600C19-8GSXKB 8GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 18.6
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 15.4
    Average value in the tests
G Skill Intl F4-3600C19-8GSXKB 8GB Reasons to consider
G Skill Intl F4-3600C19-8GSXKB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 77
    Around -175% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 28
  • Read speed, GB/s
    3,405.2 left arrow 18.6
  • Write speed, GB/s
    2,622.0 left arrow 15.4
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 3519

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
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G Skill Intl F4-3600C19-8GSXKB 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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