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Samsung M3 93T5750CZA-CE6 2GB
HT Micron HTH5AN8G8NCJR-VKD 8GB

Samsung M3 93T5750CZA-CE6 2GB vs HT Micron HTH5AN8G8NCJR-VKD 8GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 15.7
    Average value in the tests
HT Micron HTH5AN8G8NCJR-VKD 8GB Reasons to consider
HT Micron HTH5AN8G8NCJR-VKD 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 77
    Around -148% lower latency
  • Faster write speed, GB/s
    9.5 left arrow 2,622.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 31
  • Read speed, GB/s
    3,405.2 left arrow 15.7
  • Write speed, GB/s
    2,622.0 left arrow 9.5
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 2713

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

HT Micron HTH5AN8G8NCJR-VKD 8GB RAM comparisons

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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