RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
10.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
37
77
Around -108% lower latency
Faster write speed, GB/s
7.8
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
37
Read speed, GB/s
3,405.2
10.4
Write speed, GB/s
2,622.0
7.8
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
2213
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Qimonda 64T128020EDL2.5C2 1GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Kingston 99U5428-018.A00LF 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
Kingston 9965525-140.A00LF 8GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMR16GX4M2Z3200C16 8GB
Kingston 9905584-016.A00LF 4GB
Kingston 9965596-023.B01G 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-3000C14-8GTZR 8GB
Samsung M393B1G70BH0-CK0 8GB
Golden Empire CL16-18-18 D4-3200 8GB
Samsung M393B2G70BH0-CK0 16GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-2400C15-4GRR 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9965600-012.A01G 16GB
Report a bug
×
Bug description
Source link