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Samsung M323R2GA3BB0-CQKOD 16GB
G Skill Intl F4-3200C14-8GVR 8GB

Samsung M323R2GA3BB0-CQKOD 16GB vs G Skill Intl F4-3200C14-8GVR 8GB

Overall score
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Overall score
star star star star star
G Skill Intl F4-3200C14-8GVR 8GB

G Skill Intl F4-3200C14-8GVR 8GB

Differences Specifications Comments

Differences

Samsung M323R2GA3BB0-CQKOD 16GB Reasons to consider
Samsung M323R2GA3BB0-CQKOD 16GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 17000
    Around 1.13% higher bandwidth
G Skill Intl F4-3200C14-8GVR 8GB Reasons to consider
G Skill Intl F4-3200C14-8GVR 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    23 left arrow 25
    Around -9% lower latency
  • Faster reading speed, GB/s
    20.6 left arrow 13.4
    Average value in the tests
  • Faster write speed, GB/s
    16.2 left arrow 12.1
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M323R2GA3BB0-CQKOD 16GB
G Skill Intl F4-3200C14-8GVR 8GB
Main characteristics
  • Memory type
    DDR5 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 23
  • Read speed, GB/s
    13.4 left arrow 20.6
  • Write speed, GB/s
    12.1 left arrow 16.2
  • Memory bandwidth, mbps
    19200 left arrow 17000
Other
  • Description
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    3419 left arrow 3819

Samsung M323R2GA3BB0-CQKOD 16GB RAM comparisons

Micron Technology 36ASF2G72PZ-2G1A2 16GB
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G Skill Intl F4-3200C14-8GVR 8GB RAM comparisons

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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