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Samsung M323R2GA3BB0-CQKOD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Compare
Samsung M323R2GA3BB0-CQKOD 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M323R2GA3BB0-CQKOD 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M323R2GA3BB0-CQKOD 16GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
25
Around -4% lower latency
Faster reading speed, GB/s
16
13.4
Average value in the tests
Faster write speed, GB/s
12.5
12.1
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M323R2GA3BB0-CQKOD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Main characteristics
Memory type
DDR5
DDR4
Latency in PassMark, ns
25
24
Read speed, GB/s
13.4
16.0
Write speed, GB/s
12.1
12.5
Memory bandwidth, mbps
19200
19200
Other
Description
PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
no data / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3419
2925
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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