RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Compare
Samsung M378A1G43DB0-CPB 8GB vs Micron Technology 8ATF2G64AZ-3G2E1 16GB
Overall score
Samsung M378A1G43DB0-CPB 8GB
Overall score
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
Report a bug
Reasons to consider
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
36
Around -9% lower latency
Faster reading speed, GB/s
16.9
15
Average value in the tests
Faster write speed, GB/s
10.4
10.3
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
33
Read speed, GB/s
15.0
16.9
Write speed, GB/s
10.3
10.4
Memory bandwidth, mbps
17000
25600
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2569
3035
Samsung M378A1G43DB0-CPB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Samsung M471B5173DB0-YK0 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMW16GX4M1Z3200C16 16GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Kingston KHX16LC9/8GX 8GB
Apacer Technology GD2.1527WH.002 8GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4800C18-8GTRG 8GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
Kingston 99U5474-028.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Kingston 99U5471-020.A00LF 4GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
Samsung M395T2863QZ4-CF76 1GB
DSL Memory D4SH1G081SH26A-C 8GB
Kingston 9905702-010.A00G 8GB
Panram International Corporation W4N2666PS-16G 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMW128GX4M4E3200C16 32GB
Report a bug
×
Bug description
Source link