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Samsung M378A5244CB0-CTD 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Compare
Samsung M378A5244CB0-CTD 4GB vs Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Overall score
Samsung M378A5244CB0-CTD 4GB
Overall score
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A5244CB0-CTD 4GB
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Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
36
Around -64% lower latency
Faster reading speed, GB/s
17.7
15.8
Average value in the tests
Faster write speed, GB/s
13.7
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378A5244CB0-CTD 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
22
Read speed, GB/s
15.8
17.7
Write speed, GB/s
11.8
13.7
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 12 14 15
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2497
3066
Samsung M378A5244CB0-CTD 4GB RAM comparisons
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Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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