RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-8GVKB 8GB
Compare
Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3200C16-8GVKB 8GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
G Skill Intl F4-3200C16-8GVKB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
29
Around 3% lower latency
Reasons to consider
G Skill Intl F4-3200C16-8GVKB 8GB
Report a bug
Faster reading speed, GB/s
18.5
12.7
Average value in the tests
Faster write speed, GB/s
14.4
7.5
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-8GVKB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
29
Read speed, GB/s
12.7
18.5
Write speed, GB/s
7.5
14.4
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1988
3457
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
G Skill Intl F4-3200C16-8GVKB 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KF556C40-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-8GVKB 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-3200C14-16GVR 16GB
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology CB16GS2666.C8ET 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-16GFX 16GB
Hexon Technology Pte Ltd HEXON 1GB
Panram International Corporation W4N2400PS-8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-4000C18-16GTRS 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
G Skill Intl F4-3200C16-8GTZN 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
Kingmax Semiconductor FLFE85F-C8KM9 2GB
MemxPro Inc. D4S8GHIOFFC 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-4400C16-8GTZR 8GB
Kingston 99U5474-038.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Report a bug
×
Bug description
Source link