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Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-8GVKB 8GB

Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3200C16-8GVKB 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
G Skill Intl F4-3200C16-8GVKB 8GB

G Skill Intl F4-3200C16-8GVKB 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 3% 更低的延时
G Skill Intl F4-3200C16-8GVKB 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GVKB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-8GVKB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 29
  • 读取速度，GB/s
    12.7 left arrow 18.5
  • 写入速度，GB/s
    7.5 left arrow 14.4
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3457

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

G Skill Intl F4-3200C16-8GVKB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KF556C40-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-8GVKB 8GB
G Skill Intl F4-3200C16-8GVKB 8GB
内存RAM
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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SK Hynix HYMP112U64CP8-S6 1GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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