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Samsung M378B5673EH1-CF8 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Micron Technology 4ATF51264AZ-3G2E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
48
Around 42% lower latency
Reasons to consider
Micron Technology 4ATF51264AZ-3G2E1 4GB
Report a bug
Faster reading speed, GB/s
17.5
12.7
Average value in the tests
Faster write speed, GB/s
8.3
7.5
Average value in the tests
Higher memory bandwidth, mbps
25600
8500
Around 3.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
48
Read speed, GB/s
12.7
17.5
Write speed, GB/s
7.5
8.3
Memory bandwidth, mbps
8500
25600
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
7-7-7-20 / 1066 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1988
2196
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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