RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
16.4
Average value in the tests
Reasons to consider
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Report a bug
Below the latency in the PassMark tests, ns
38
56
Around -47% lower latency
Faster write speed, GB/s
13.7
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
38
Read speed, GB/s
4,387.7
16.4
Write speed, GB/s
1,813.5
13.7
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
693
3206
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-4400C16-8GTRS 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C16-16GTZRX 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3600C19-16GSXWB 16GB
Samsung M393B1K70CH0-CH9 8GB
Kingston ACR32D4U2S1ME-8 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Samsung M471A2K43BB1-CPB 16GB
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2400C12D4/8GX 8GB
Kingston 9965525-018.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMK16GX4M2A2400C14 8GB
Kingston 99U5474-022.A00LF 2GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3200C16-8GVKB 8GB
Report a bug
×
Bug description
Source link