RAM comparison Samsung M393A1G40DB0-CPB 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Samsung M393A1G40DB0-CPB 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score

Samsung M393A1G40DB0-CPB 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M393A1G40DB0-CPB 8GB

Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Below the latency in the PassMark tests, ns

31 49

Around -58% lower latency
Faster reading speed, GB/s

20.5 10.9

Average value in the tests
Faster write speed, GB/s

15.5 8.7

Average value in the tests
Higher memory bandwidth, mbps

25600 17000

Around 1.51 higher bandwidth

Complete list of technical specifications

Samsung M393A1G40DB0-CPB 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Main characteristics

Other

Description

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2427 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns