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Samsung M393B1G73QH0-CMA 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB

Samsung M393B1G73QH0-CMA 8GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

Overall score
star star star star star
Samsung M393B1G73QH0-CMA 8GB

Samsung M393B1G73QH0-CMA 8GB

Overall score
star star star star star
Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Differences Specifications Comments

Differences

Samsung M393B1G73QH0-CMA 8GB Reasons to consider
Samsung M393B1G73QH0-CMA 8GB
Report a bug
Chun Well Technology Holding Limited D4U0826190B 8GB Reasons to consider
Chun Well Technology Holding Limited D4U0826190B 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 42
    Around -45% lower latency
  • Faster reading speed, GB/s
    16.7 left arrow 11.5
    Average value in the tests
  • Faster write speed, GB/s
    12.9 left arrow 9.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 14200
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1G73QH0-CMA 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 29
  • Read speed, GB/s
    11.5 left arrow 16.7
  • Write speed, GB/s
    9.5 left arrow 12.9
  • Memory bandwidth, mbps
    14200 left arrow 21300
Other
  • Description
    PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2432 left arrow 3273

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Chun Well Technology Holding Limited D4U0826190B 8GB RAM comparisons

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