RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70CH0-YH9 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Samsung M393B1K70CH0-YH9 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Samsung M393B1K70CH0-YH9 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70CH0-YH9 8GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
49
Around -172% lower latency
Faster reading speed, GB/s
20.4
10.1
Average value in the tests
Faster write speed, GB/s
18.1
7.8
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70CH0-YH9 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
18
Read speed, GB/s
10.1
20.4
Write speed, GB/s
7.8
18.1
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2070
3529
Samsung M393B1K70CH0-YH9 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2400C17-16GSXF 16GB
Samsung M393B1K70CH0-YH9 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CM4X32GE2666C18S2 32GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston KF2666C15S4/16G 16GB
Kingston 9905584-016.A00LF 4GB
Samsung M378A2K43DB1-CVF 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
SK Hynix HMA451U7MFR8N-TF 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
Samsung M3 93T5750CZA-CE6 2GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471A2K43CB1-CRCR 16GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3466C16-16GTZ 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMW16GX4M1D3000C16 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Report a bug
×
Bug description
Source link