RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 36ASF4G72PZ-2G6D1 32GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
11.7
Average value in the tests
Faster write speed, GB/s
2,404.5
10.7
Average value in the tests
Reasons to consider
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Report a bug
Below the latency in the PassMark tests, ns
48
104
Around -117% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
48
Read speed, GB/s
3,192.0
11.7
Write speed, GB/s
2,404.5
10.7
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
2568
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C16-8GTRS 8GB
Samsung M378B5173BH0-CH9 4GB
A-DATA Technology DDR4 3200 8GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-3200C14-16GTZKO 16GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMK32GX4M2Z4000C18 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMD32GX4M4B3866C18 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A1G43TB1-CTD 8GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Report a bug
×
Bug description
Source link