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Samsung M395T5160QZ4-CE66 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Compare
Samsung M395T5160QZ4-CE66 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Overall score
Samsung M395T5160QZ4-CE66 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T5160QZ4-CE66 2GB
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Faster reading speed, GB/s
2
15.2
Average value in the tests
Faster write speed, GB/s
2,072.7
10.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
75
Around -178% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T5160QZ4-CE66 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
27
Read speed, GB/s
2,730.3
15.2
Write speed, GB/s
2,072.7
10.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
858
2764
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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