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Samsung M395T5160QZ4-CE66 2GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Compare
Samsung M395T5160QZ4-CE66 2GB vs Micron Technology 18ASF2G72AZ-2G1A1 16GB
Overall score
Samsung M395T5160QZ4-CE66 2GB
Overall score
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T5160QZ4-CE66 2GB
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Faster reading speed, GB/s
2
11.7
Average value in the tests
Reasons to consider
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
75
Around -142% lower latency
Faster write speed, GB/s
7.7
2,072.7
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T5160QZ4-CE66 2GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
31
Read speed, GB/s
2,730.3
11.7
Write speed, GB/s
2,072.7
7.7
Memory bandwidth, mbps
5300
17000
Other
Description
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
858
1997
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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