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Samsung M4 70T5663QZ3-CE6 2GB
AMD R744G2400U1S 4GB

Samsung M4 70T5663QZ3-CE6 2GB vs AMD R744G2400U1S 4GB

Overall score
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Overall score
star star star star star
AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

Differences Specifications Comments

Differences

Samsung M4 70T5663QZ3-CE6 2GB Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16.7
    Average value in the tests
AMD R744G2400U1S 4GB Reasons to consider
AMD R744G2400U1S 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 68
    Around -209% lower latency
  • Faster write speed, GB/s
    11.6 left arrow 1,702.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T5663QZ3-CE6 2GB
AMD R744G2400U1S 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    68 left arrow 22
  • Read speed, GB/s
    3,886.6 left arrow 16.7
  • Write speed, GB/s
    1,702.6 left arrow 11.6
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    654 left arrow 2862

Samsung M4 70T5663QZ3-CE6 2GB RAM comparisons

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

AMD R744G2400U1S 4GB RAM comparisons

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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