RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663QZ3-CE6 2GB
Crucial Technology CB8GS2400.C8D 8GB
Compare
Samsung M4 70T5663QZ3-CE6 2GB vs Crucial Technology CB8GS2400.C8D 8GB
Overall score
Samsung M4 70T5663QZ3-CE6 2GB
Overall score
Crucial Technology CB8GS2400.C8D 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug
Below the latency in the PassMark tests, ns
68
89
Around 24% lower latency
Faster reading speed, GB/s
3
13.6
Average value in the tests
Reasons to consider
Crucial Technology CB8GS2400.C8D 8GB
Report a bug
Faster write speed, GB/s
6.8
1,702.6
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663QZ3-CE6 2GB
Crucial Technology CB8GS2400.C8D 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
68
89
Read speed, GB/s
3,886.6
13.6
Write speed, GB/s
1,702.6
6.8
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
654
1518
Samsung M4 70T5663QZ3-CE6 2GB RAM comparisons
SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CB8GS2400.C8D 8GB RAM comparisons
G Skill Intl F4-2800C15-4GVR 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JTF25664AZ-1G4F1 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Kingston 9965433-034.A00LF 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C14-32GTZR 32GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-3400C16-4GRBD 4GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Crucial Technology CT102464BA160B.M16 8GB
Asgard VMA42UG-MEC1U2AW1 8GB
A-DATA Technology DQVE1908 512MB
Corsair CMT128GX4M8X3600C18 16GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMK32GX4M2L3200C16 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905624-023.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2400C15-8GTZRX 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology CB4GU2400.M8E 4GB
Report a bug
×
Bug description
Source link