RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A1G44AB0-CWE 8GB
AMD R9S48G3206U2S 8GB
Compare
Samsung M471A1G44AB0-CWE 8GB vs AMD R9S48G3206U2S 8GB
Overall score
Samsung M471A1G44AB0-CWE 8GB
Overall score
AMD R9S48G3206U2S 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
AMD R9S48G3206U2S 8GB
Report a bug
Below the latency in the PassMark tests, ns
37
50
Around -35% lower latency
Faster reading speed, GB/s
20.6
15.3
Average value in the tests
Faster write speed, GB/s
13.9
10.9
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A1G44AB0-CWE 8GB
AMD R9S48G3206U2S 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
50
37
Read speed, GB/s
15.3
20.6
Write speed, GB/s
10.9
13.9
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2512
3518
Samsung M471A1G44AB0-CWE 8GB RAM comparisons
Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD R9S48G3206U2S 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471A1G44AB0-CWE 8GB
AMD R9S48G3206U2S 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 9JSF25672AZ-1G6M1 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire CL16-18-18 D4-3400 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-2666C15-4GVK 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Kingston KF552C40-16 16GB
Crucial Technology CB16GS2666.C8ET 16GB
AMD R538G1601U2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
SK Hynix HYMP112U64CP8-S6 1GB
Kingston ACR24D4U7S8MB-8 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Samsung M378B5173BH0-CH9 4GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
Samsung M395T5750EZ4-CE66 2GB
G Skill Intl F4-2133C15-16GIS 16GB
Crucial Technology CT102464BA160B.M16 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2133C15-4GRS 4GB
Report a bug
×
Bug description
Source link