Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT2K102464BD160B 8GB

Samsung M471A1G44AB0-CWE 8GB vs Crucial Technology CT2K102464BD160B 8GB

Overall score
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Overall score
star star star star star
Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Differences

  • Faster write speed, GB/s
    10.9 left arrow 9.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2% higher bandwidth
  • Below the latency in the PassMark tests, ns
    38 left arrow 50
    Around -32% lower latency
  • Faster reading speed, GB/s
    15.6 left arrow 15.3
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT2K102464BD160B 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    50 left arrow 38
  • Read speed, GB/s
    15.3 left arrow 15.6
  • Write speed, GB/s
    10.9 left arrow 9.8
  • Memory bandwidth, mbps
    25600 left arrow 12800
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2512 left arrow 2566
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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