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Samsung M471A1G44AB0-CWE 8GB
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M471A1G44AB0-CWE 8GB vs Samsung M323R2GA3BB0-CQKOD 16GB

Overall score
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Overall score
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Differences Specifications Comments

Differences

Samsung M471A1G44AB0-CWE 8GB Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
Report a bug
  • Faster reading speed, GB/s
    15.3 left arrow 13.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 19200
    Around 1.33% higher bandwidth
Samsung M323R2GA3BB0-CQKOD 16GB Reasons to consider
Samsung M323R2GA3BB0-CQKOD 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 50
    Around -100% lower latency
  • Faster write speed, GB/s
    12.1 left arrow 10.9
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A1G44AB0-CWE 8GB
Samsung M323R2GA3BB0-CQKOD 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR5
  • Latency in PassMark, ns
    50 left arrow 25
  • Read speed, GB/s
    15.3 left arrow 13.4
  • Write speed, GB/s
    10.9 left arrow 12.1
  • Memory bandwidth, mbps
    25600 left arrow 19200
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow no data / 2400 MHz
  • Ranking PassMark (The more the better)
    2512 left arrow 3419

Samsung M471A1G44AB0-CWE 8GB RAM comparisons

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M323R2GA3BB0-CQKOD 16GB RAM comparisons

Micron Technology 36ASF2G72PZ-2G1A2 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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