RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-4800C19-8GTESC 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-4800C19-8GTESC 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
G Skill Intl F4-4800C19-8GTESC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-4800C19-8GTESC 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
38
Around -52% lower latency
Faster reading speed, GB/s
17.4
15.5
Average value in the tests
Faster write speed, GB/s
18.3
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-4800C19-8GTESC 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
25
Read speed, GB/s
15.5
17.4
Write speed, GB/s
12.0
18.3
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2283
3731
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4800C19-8GTESC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Micron Technology 4ATF51264HZ-3G2J1 4GB
AMD R538G1601U2S-UO 8GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Kingston 99U5584-007.A00LF 4GB
Kingston MSI32D4S2S1ME-8 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMR128GX4M8Z2933C16 16GB
Samsung M3 78T2863EHS-CF7 1GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Kingston 99U5471-066.A00LF 8GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMU16GX4M2A2400C16 8GB
Kingston 9965516-430.A00G 16GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-2400C15-4GIS 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology BL8G30C15U4W.8FE 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Kingston CBD24D4S7D8ME-16 16GB
Samsung M3 78T2863EHS-CF7 1GB
DSL Memory D4SS12082SH21A-A 8GB
Samsung M391B5673FH0-CH9 2GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Report a bug
×
Bug description
Source link