Samsung M471B5173BH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Samsung M471B5173BH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Overall score
star star star star star
Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Differences

  • Faster write speed, GB/s
    7.2 left arrow 6.3
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    24 left arrow 42
    Around -75% lower latency
  • Faster reading speed, GB/s
    12.7 left arrow 12
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5173BH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 24
  • Read speed, GB/s
    12.0 left arrow 12.7
  • Write speed, GB/s
    7.2 left arrow 6.3
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1933 left arrow 2256
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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