Samsung M471B5173BH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

総合得点

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

相違点仕様コメント

相違点

Samsung M471B5173BH0-CK0 4GB

考慮すべき理由
Samsung M471B5173BH0-CK0 4GB

バグを報告する

書き込み速度の高速化、GB/s

7.2 6.3

テスト平均値

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 42

周辺 -75% 低遅延
読み出し速度の高速化、GB/s

12.7 12

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5173BH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

42 24
読み出し速度、GB/s

12.0 12.7
書き込み速度、GB/秒

7.2 6.3
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1933 2256

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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