RAM comparison Samsung M471B5273EB0-CK0 4GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Samsung M471B5273EB0-CK0 4GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Overall score

Samsung M471B5273EB0-CK0 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M471B5273EB0-CK0 4GB

Reasons to consider
Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Below the latency in the PassMark tests, ns

28 40

Around -43% lower latency
Faster reading speed, GB/s

18.1 12.3

Average value in the tests
Faster write speed, GB/s

15.6 8.9

Average value in the tests
Higher memory bandwidth, mbps

21300 12800

Around 1.66 higher bandwidth

Complete list of technical specifications

Samsung M471B5273EB0-CK0 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

1789 3693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns