RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
73
Around 59% lower latency
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Report a bug
Faster reading speed, GB/s
15.1
10.6
Average value in the tests
Faster write speed, GB/s
7.9
6.8
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
73
Read speed, GB/s
10.6
15.1
Write speed, GB/s
6.8
7.9
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1479
1724
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK128GX4M8A2666C16 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA41GS6AFR8N-TF 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Hewlett-Packard 7EH98AA#ABB 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4133C19-4GTZ 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Qimonda 64T128020EDL2.5C2 1GB
Asgard VMA41UF-MEC1U2BQ2 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hyundai Inc GR26C16S8K2HU416 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-4400C18-8GTZR 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMW64GX4M4Z2933C16 16GB
Kingston KVR533D2N4 512MB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Report a bug
×
Bug description
Source link