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Samsung M471B5773DH0-CH9 2GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Compare
Samsung M471B5773DH0-CH9 2GB vs Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Overall score
Samsung M471B5773DH0-CH9 2GB
Overall score
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5773DH0-CH9 2GB
Report a bug
Reasons to consider
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
43
Around -43% lower latency
Faster reading speed, GB/s
17.2
11
Average value in the tests
Faster write speed, GB/s
13.4
7.2
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5773DH0-CH9 2GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
30
Read speed, GB/s
11.0
17.2
Write speed, GB/s
7.2
13.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1393
3238
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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