RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 99U5701-036.A00G 16GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Kingston 99U5701-036.A00G 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Kingston 99U5701-036.A00G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
374
Around 94% lower latency
Faster reading speed, GB/s
17.7
0.8
Average value in the tests
Faster write speed, GB/s
12.7
1.0
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Kingston 99U5701-036.A00G 16GB
Report a bug
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 99U5701-036.A00G 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
374
Read speed, GB/s
17.7
0.8
Write speed, GB/s
12.7
1.0
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3075
269
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Kingston 99U5701-036.A00G 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR533D2N4 512MB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 99U5701-036.A00G 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3200C18-8GRS 8GB
Samsung M393B1K70QB0-CK0 8GB
AMD R948G2806U2S 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMT64GX4M8Z3600C16 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston 99U5723-002.A00G 8GB
Samsung M393B1G70BH0-YK0 8GB
Apacer Technology 78.CAGR9.40C0B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C16-8GTZR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA81GS6CJRJR-VK 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Good Wealth Technology Ltd. 8GB
Kingston 9965525-155.A00LF 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Golden Empire 1GB DDR2 800 CAS=4 1GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Kingston K531R8-MIN 4GB
Kingston HP26D4S9S8MD-8 8GB
Report a bug
×
Bug description
Source link