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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Micron Technology CT8G4DFD8213.16FA11 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Micron Technology CT8G4DFD8213.16FA11 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
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Below the latency in the PassMark tests, ns
22
28
Around 21% lower latency
Faster reading speed, GB/s
17.7
12
Average value in the tests
Faster write speed, GB/s
12.7
9.1
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Micron Technology CT8G4DFD8213.16FA11 8GB
Report a bug
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
28
Read speed, GB/s
17.7
12.0
Write speed, GB/s
12.7
9.1
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3075
2347
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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RAM 2
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