Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

差异规格评论

差异

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 28

左右 21% 更低的延时
更快的读取速度，GB/s

17.7 12

测试中的平均数值
更快的写入速度，GB/s

12.7 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Micron Technology CT8G4DFD8213.16FA11 8GB

需要考虑的原因
Micron Technology CT8G4DFD8213.16FA11 8GB

报告一个错误

规格

完整的技术规格清单

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

22 28
读取速度，GB/s

17.7 12.0
写入速度，GB/s

12.7 9.1
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3075 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

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Micron Technology CT8G4DFD8213.16FA11 8GB

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AMD R534G1601U1S-UO 4GB

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston X0N6VG-HYD2 16GB

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Crucial Technology CT25664AA800.M16FG 2GB

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G Skill Intl F4-4266C17-16GTZRB 16GB

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Mushkin 99[2/7/4]209F 8GB

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