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takeMS International AG TMS2GB264D083805EV 2GB
Samsung M474A1G43DB0-CPB 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Samsung M474A1G43DB0-CPB 8GB

Overall score
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Overall score
star star star star star
Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Differences Specifications Comments

Differences

takeMS International AG TMS2GB264D083805EV 2GB Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Samsung M474A1G43DB0-CPB 8GB Reasons to consider
Samsung M474A1G43DB0-CPB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 50
    Around -85% lower latency
  • Faster reading speed, GB/s
    9.7 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    6.8 left arrow 1,457.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Samsung M474A1G43DB0-CPB 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    50 left arrow 27
  • Read speed, GB/s
    3,757.3 left arrow 9.7
  • Write speed, GB/s
    1,457.4 left arrow 6.8
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    557 left arrow 1767

takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M474A1G43DB0-CPB 8GB RAM comparisons

Corsair CM5S16GM4800A40N2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Samsung M474A1G43DB0-CPB 8GB
Samsung M474A1G43DB0-CPB 8GB
Memory RAM
Micron Technology 16JTF1G64AZ-1G6E1 8GB
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Kingston 9965669-008.A03G 16GB
Memory RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
Memory RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Memory RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
Memory RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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Kingston KHX2400C14S4/16G 16GB
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
Memory RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMU16GX4M2C3000C15 8GB
Corsair CMU16GX4M2C3000C15 8GB
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A-DATA Technology DQVE1B16 2GB
A-DATA Technology DQVE1B16 2GB
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G Skill Intl F4-2400C15Z8GNT 8GB
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Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
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Memory RAM
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Kingston 9965662-016.A00G 16GB
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G Skill Intl F4-3200C16-32GTZN 32GB
Memory RAM
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Kingston KVR26N19D8/16 16GB
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Kingston HP698651-154-MCN 8GB
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G Skill Intl F4-2666C16-8GRB 8GB
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