RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 9DNPBNZB-TATP 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Compare
TwinMOS 9DNPBNZB-TATP 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Overall score
TwinMOS 9DNPBNZB-TATP 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 9DNPBNZB-TATP 4GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
25
Around -9% lower latency
Faster reading speed, GB/s
17.5
12.5
Average value in the tests
Faster write speed, GB/s
14.6
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 9DNPBNZB-TATP 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
23
Read speed, GB/s
12.5
17.5
Write speed, GB/s
8.4
14.6
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2180
3260
TwinMOS 9DNPBNZB-TATP 4GB RAM comparisons
Samsung M378B2873FHS-CH9 1GB
Kingston KHX2666C16/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR533D2N4 512MB
Corsair CMW32GX4M4C3200C14 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
SK Hynix V-GeN D3H8GL1600RN 8GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9965596-002.B00G 4GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C15-8GTZRX 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD8213.M16FB 16GB
Samsung M471B5273EB0-CK0 4GB
Samsung M378A2G43MB1-CTD 16GB
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Kingston 9965525-018.A00LF 4GB
Corsair CMN32GX4M2Z3600C18 16GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston XK2M26-MIE 16GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-2133C15-4GRB 4GB
Report a bug
×
Bug description
Source link