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TwinMOS 9DNPBNZB-TATP 4GB
Samsung M393A5143DB0-CPB 4GB

TwinMOS 9DNPBNZB-TATP 4GB vs Samsung M393A5143DB0-CPB 4GB

Overall score
star star star star star
TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Overall score
star star star star star
Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

Differences Specifications Comments

Differences

TwinMOS 9DNPBNZB-TATP 4GB Reasons to consider
TwinMOS 9DNPBNZB-TATP 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 54
    Around 54% lower latency
  • Faster reading speed, GB/s
    12.5 left arrow 10.4
    Average value in the tests
Samsung M393A5143DB0-CPB 4GB Reasons to consider
Samsung M393A5143DB0-CPB 4GB
Report a bug
  • Faster write speed, GB/s
    8.5 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 9DNPBNZB-TATP 4GB
Samsung M393A5143DB0-CPB 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 54
  • Read speed, GB/s
    12.5 left arrow 10.4
  • Write speed, GB/s
    8.4 left arrow 8.5
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2180 left arrow 2226

TwinMOS 9DNPBNZB-TATP 4GB RAM comparisons

Samsung M378B2873FHS-CH9 1GB
Kingston KHX2666C16/8G 8GB

Samsung M393A5143DB0-CPB 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology F6451U66G1600G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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