Samsung M471B5673FH0-CF8 2GB vs ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Puntuación global

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Puntuación global

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Diferencias Especificaciones Comentarios

Diferencias

Samsung M471B5673FH0-CF8 2GB

Razones a tener en cuenta
Samsung M471B5673FH0-CF8 2GB

Informar de un error

Mayor velocidad de escritura, GB/s

6.8 6.1

Valor medio en las pruebas

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Razones a tener en cuenta
ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Informar de un error

Mayor velocidad de lectura, GB/s

11.1 10.6

Valor medio en las pruebas
Mayor ancho de banda de la memoria, mbps

17000 8500

En 2 mayor ancho de banda

Especificaciones

Lista completa de especificaciones técnicas

Samsung M471B5673FH0-CF8 2GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Principales características

Tipo de memoria

DDR3 DDR4
Latencia en PassMark, ns

30 30
Velocidad de lectura, GB/s

10.6 11.1
Velocidad de escritura, GB/s

6.8 6.1
Ancho de banda de la memoria, mbps

8500 17000

Other

Descripción

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
Tiempos / Velocidad del reloj

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Clasificación PassMark (Cuanto más, mejor)

1479 1254

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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