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Samsung M3 93T5750CZA-CE6 2GB
Samsung SF4721G4CKHH6DFSDS 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Samsung SF4721G4CKHH6DFSDS 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Punteggio complessivo
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Samsung SF4721G4CKHH6DFSDS 8GB

Samsung SF4721G4CKHH6DFSDS 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 93T5750CZA-CE6 2GB Motivi da considerare
Samsung M3 93T5750CZA-CE6 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    3 left arrow 10.4
    Valore medio nei test
Samsung SF4721G4CKHH6DFSDS 8GB Motivi da considerare
Samsung SF4721G4CKHH6DFSDS 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    31 left arrow 77
    Intorno -148% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    5.3 left arrow 2,622.0
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 5300
    Intorno 3.21 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M3 93T5750CZA-CE6 2GB
Samsung SF4721G4CKHH6DFSDS 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR4
  • Latenza in PassMark, ns
    77 left arrow 31
  • Velocità di lettura, GB/s
    3,405.2 left arrow 10.4
  • Velocità di scrittura, GB/s
    2,622.0 left arrow 5.3
  • Larghezza di banda della memoria, mbps
    5300 left arrow 17000
Other
  • Descrizione
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    763 left arrow 1740

Samsung M3 93T5750CZA-CE6 2GB Confronto tra le RAM

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Samsung SF4721G4CKHH6DFSDS 8GB Confronto tra le RAM

Samsung M395T2863QZ4-CF76 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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