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Samsung M393B1G70BH0-CK0 8GB
Micron Technology 99P5474-055.A00LF 4GB

Samsung M393B1G70BH0-CK0 8GB vs Micron Technology 99P5474-055.A00LF 4GB

Punteggio complessivo
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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Punteggio complessivo
star star star star star
Micron Technology 99P5474-055.A00LF 4GB

Micron Technology 99P5474-055.A00LF 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B1G70BH0-CK0 8GB Motivi da considerare
Samsung M393B1G70BH0-CK0 8GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    8.1 left arrow 7.4
    Valore medio nei test
Micron Technology 99P5474-055.A00LF 4GB Motivi da considerare
Micron Technology 99P5474-055.A00LF 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    26 left arrow 51
    Intorno -96% latenza inferiore
  • Velocità di lettura più elevata, GB/s
    11.9 left arrow 9.8
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 99P5474-055.A00LF 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    51 left arrow 26
  • Velocità di lettura, GB/s
    9.8 left arrow 11.9
  • Velocità di scrittura, GB/s
    8.1 left arrow 7.4
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2208 left arrow 2000

Samsung M393B1G70BH0-CK0 8GB Confronto tra le RAM

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Micron Technology 99P5474-055.A00LF 4GB Confronto tra le RAM

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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