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Samsung M393B1G70BH0-CK0 8GB
Micron Technology 99P5474-055.A00LF 4GB

Samsung M393B1G70BH0-CK0 8GB vs Micron Technology 99P5474-055.A00LF 4GB

Pontuação geral
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Pontuação geral
star star star star star
Micron Technology 99P5474-055.A00LF 4GB

Micron Technology 99P5474-055.A00LF 4GB

Diferenças Especificações Comentários

Diferenças

Samsung M393B1G70BH0-CK0 8GB Razões a considerar
Samsung M393B1G70BH0-CK0 8GB
Relatar um erro
  • Velocidade de escrita mais rápida, GB/s
    8.1 left arrow 7.4
    Valor médio nos testes
Micron Technology 99P5474-055.A00LF 4GB Razões a considerar
Micron Technology 99P5474-055.A00LF 4GB
Relatar um erro
  • Abaixo da latência nos testes do PassMark, ns
    26 left arrow 51
    Por volta de -96% menor latência
  • Velocidade de leitura mais rápida, GB/s
    11.9 left arrow 9.8
    Valor médio nos testes

Especificações

Lista completa de especificações técnicas
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 99P5474-055.A00LF 4GB
Características principais
  • Tipo de memória
    DDR3 left arrow DDR3
  • Latência em PassMark, ns
    51 left arrow 26
  • Velocidade de leitura, GB/s
    9.8 left arrow 11.9
  • Velocidade de escrita, GB/s
    8.1 left arrow 7.4
  • Largura de banda de memória, mbps
    12800 left arrow 12800
Other
  • Descrição
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Tempos / Velocidade do relógio
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (Quanto mais, melhor)
    2208 left arrow 2000

Samsung M393B1G70BH0-CK0 8GB Comparações de RAM

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Micron Technology 99P5474-055.A00LF 4GB Comparações de RAM

G Skill Intl F4-3600C19-8GVSB 8GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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