Samsung M393B5270CH0-CH9 4GB vs Micron Technology 18KSF51272PZ-1G4K1 4GB

Punteggio complessivo

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Punteggio complessivo

Micron Technology 18KSF51272PZ-1G4K1 4GB

Micron Technology 18KSF51272PZ-1G4K1 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B5270CH0-CH9 4GB

Motivi da considerare
Samsung M393B5270CH0-CH9 4GB

Velocità di lettura più elevata, GB/s

10.6 7.5

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.0 7.4

Valore medio nei test

Micron Technology 18KSF51272PZ-1G4K1 4GB

Motivi da considerare
Micron Technology 18KSF51272PZ-1G4K1 4GB

Al di sotto della latenza nei test PassMark, ns

39 42

Intorno -8% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M393B5270CH0-CH9 4GB

Micron Technology 18KSF51272PZ-1G4K1 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

42 39
Velocità di lettura, GB/s

10.6 7.5
Velocità di scrittura, GB/s

9.0 7.4
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

2423 1683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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