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Samsung M393B5270CH0-CH9 4GB
Micron Technology 18KSF51272PZ-1G4K1 4GB

Samsung M393B5270CH0-CH9 4GB vs Micron Technology 18KSF51272PZ-1G4K1 4GB

Overall score
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Overall score
star star star star star
Micron Technology 18KSF51272PZ-1G4K1 4GB

Micron Technology 18KSF51272PZ-1G4K1 4GB

Differences Specifications Comments

Differences

Samsung M393B5270CH0-CH9 4GB Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
  • Faster reading speed, GB/s
    10.6 left arrow 7.5
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 7.4
    Average value in the tests
Micron Technology 18KSF51272PZ-1G4K1 4GB Reasons to consider
Micron Technology 18KSF51272PZ-1G4K1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    39 left arrow 42
    Around -8% lower latency

Specifications

Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
Micron Technology 18KSF51272PZ-1G4K1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    42 left arrow 39
  • Read speed, GB/s
    10.6 left arrow 7.5
  • Write speed, GB/s
    9.0 left arrow 7.4
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2423 left arrow 1683

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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