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Samsung M471B5173BH0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173BH0-YK0 4GB vs Samsung M471B5173EB0-YK0 4GB

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Samsung M471B5173BH0-YK0 4GB

Samsung M471B5173BH0-YK0 4GB

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Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5173BH0-YK0 4GB Motivi da considerare
Samsung M471B5173BH0-YK0 4GB
Segnala un bug
Samsung M471B5173EB0-YK0 4GB Motivi da considerare
Samsung M471B5173EB0-YK0 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13 left arrow 11.5
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.2 left arrow 7.7
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M471B5173BH0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    44 left arrow 44
  • Velocità di lettura, GB/s
    11.5 left arrow 13.0
  • Velocità di scrittura, GB/s
    7.7 left arrow 8.2
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    1927 left arrow 2069

Samsung M471B5173BH0-YK0 4GB Confronto tra le RAM

Crucial Technology CT25664BF160BJ.M4F 2GB
Samsung M471A2K43DB1-CWE 16GB

Samsung M471B5173EB0-YK0 4GB Confronto tra le RAM

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Ultimi confronti

Samsung M471B5173BH0-YK0 4GB
Samsung M471B5173BH0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Memoria RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
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Micron Technology 16ATF2G64HZ-2G6E1 16GB
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Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
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Kingston X2YH1K-MIE-NX 16GB
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Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
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Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
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Golden Empire CL15-15-15 D4-2133 8GB
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Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
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Crucial Technology BL8G32C16S4B.8FE 8GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-3600C19-16GTRG 16GB
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SK Hynix HMT151R7TFR4C-H9 4GB
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Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Memoria RAM
Kingston 9905403-090.A01LF 4GB
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TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
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Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
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Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
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Memoria RAM