Samsung M471B5173QH0-YK0 4GB vs Micron Technology 72ASS8G72LZ-2G6D2 64GB

Punteggio complessivo

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Punteggio complessivo

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5173QH0-YK0 4GB

Motivi da considerare
Samsung M471B5173QH0-YK0 4GB

Velocità di lettura più elevata, GB/s

12.3 8.7

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.0 7.0

Valore medio nei test

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Motivi da considerare
Micron Technology 72ASS8G72LZ-2G6D2 64GB

Al di sotto della latenza nei test PassMark, ns

38 45

Intorno -18% latenza inferiore
Larghezza di banda di memoria superiore, mbps

21300 12800

Intorno 1.66 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471B5173QH0-YK0 4GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

45 38
Velocità di lettura, GB/s

12.3 8.7
Velocità di scrittura, GB/s

8.0 7.0
Larghezza di banda della memoria, mbps

12800 21300

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classifica PassMark (più sono, meglio è)

1992 1999

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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